测试周期:
根据标准、试验条件及被测样品量确定
产品范围:
MOSFET、IGBT、DIODE、BJT,第三代半导体器件等分立器件,以及上述元件构成的功率模块
测试项目:
静态参数 | 符号 |
Drain to Source Breakdown Voltage | BVDSS |
Drain Leakage Current | IDSS |
Gate Leakage Current | IGSS |
Gate Threshold Voltage | VGS(th) |
Drain to Source On Resistance | RDS(on) |
Drain to Source On Voltage | VDS(on) |
Body Diode Forward Voltage | VSD |
Internal Gate Resistance | Rg |
Input capacitance | Cies |
Output capacitance | Coes |
Reverse transfer capacitance | Cres |
Transconductance | gfs |
Gate to Source Plateau Voltage | Vgs(pl) |
动态参数 | 符号 |
Turn-on delay time | td(on) |
Rise time | tr |
Turn-off delay time | td(off) |
Fall time | tf |
Turn-on energy | Eon |
Turn-off energy | Eoff |
Diode reverse recovery time | trr |
Diode reverse recovery charge | Qrr |
Diode peak reverse recovery current | Irrm |
Diode peak rate of fall of reverse recovery current |
dirr/dt |
Total gate charge | QG |
Gate-Emitter charge | QGC |
Gate-Collector charge | QGE |
其他参数 | 符号 |
thermal resistance | Rth |
Unclamped Inductive Switching | UIS |
Reverse biased safe operating area | RBSOA |
Short circuit safe operation area | SCSOA |